(1) 著書
1. 協会20年史和田隆博
第2部 光産業・光技術の歩み 第2章 第8節 2. 太陽光発電技術動向 ((財)光産業技術振興協会, 2001) pp.63-65.
2. セラミック工学ハンドブック(第2版)
和田隆博
2.3.1 太陽電池材料 b 化合物
(ISBN 4-7655-0032-2 日本セラミックス協会編, 技報堂出版, 2002年4月).
3. “Japanese Research Review for Pioneering Ternary and Multinary Compounds in the 21st Cencury”, IPAP Books 1, edited by T. Matsumoto, T. Takizawa, S. Shirakata, T. Wada and N. Yamamoto (2001).
4.”Preparation of Cu(In,Ga)Se2 Films by Physical Vapor Deposition with Real Time Composition Monitoring System for High Efficiency Photovoltaic Cells”
T. Wada, N. Kohara, S. Nishiwaki and T. Negami
Ternary and Multinary Compounds in the 21st Cencury, IPAP Books 1, edited by T. Matsumoto, T. Takizawa, S. Shirakata, T. Wada and N. Yamamoto, pp. 319-324 (2001).
5.”Preparation and Characterization of CuIn3Se5 and Cu(In,Ga)3Se5 Thin Films”,
T. Negami, N. Kohara and T. Wada
Ternary and Multinary Compounds in the 21st Cencury, IPAP Books 1, edited by T. Matsumoto, T. Takizawa, S. Shirakata, T. Wada and N. Yamamoto, pp.157-161 (2001).
(2) 解説・報告論文
1. リポ-ト国際会議 2001 MRS Spring Meeting Symposium H: II-VI Compound Semiconductor Photovoltaic Materials和田隆博
OPTONEWS 2001 No.4 (通巻124号), 42-44.
(3) 原著論文
1.”Characterization of the Cu(In,Ga)Se2/Mo Interface in CIGS Solar Cells”T. Wada, N. Kohara, S. Nishiwaki and T. Negami
Thin Solid Films 387, 118-122 (2001). (http://dx.doi.org/10.1016/S0040-6090(00)01846-0)
2.”Anion Vacancies in CuInSe2″
S. Niki, R. Suzuki, S. Ishibashi, T. Ohdaira, P. J. Fons, A. Yamada, H. Oyanagi, T. Wada, R. Kimura and T. Nakada
Thin Solid Films 387, 129-134 (2001). (http://dx.doi.org/10.1016/S0040-6090(00)01718-1)
3.”Dielectric and Piezoelectric Properties of (A0.5Bi0.5)TiO3 – ANbO3 (A = Na, K) Systems”
T. Wada, K. Toyoike, Y. Imanaka and Y. Matsuo
Jpn. J. Appl. Phys. 40, 5703-5705 (2001). (DOI: 10.1143/JJAP.40.5703)
(4)国際会議報告
1.”Physical Vapor Deposition of Cu(In,Ga)Se2 Films for Industrial Application”T. Wada, S. Nishiwaki, Y. Hashimoto and T. Negami
Mat. Res. Soc. Symp. Proc 668 (II-VI Semiconductor Photovoltaic Materials), H2.1.1 (2001). (DOI: http://dx.doi.org/10.1557/PROC-668-H2.1 )